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| Preliminary K6F2016R4G Family CMOS SRAM 2Mb(128K x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. -1Revision 0.0 April 2005 Preliminary K6F2016R4G Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date April 25, 2005 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -2- Revision 0.0 April 2005 Preliminary K6F2016R4G Family FEATURES * * * * * * CMOS SRAM GENERAL DESCRIPTION The K6F2016R4G families are fabricated by SAMSUNGs advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current. 128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Process Technology: Full CMOS Organization: 128K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby (ISB1, Typ.) 0.5A2) Operating (ICC1, Max) 2mA PKG Type K6F2016R4G-F Industrial(-40~85C) 1.65~1.95V 701)/85ns 48-FBGA-6.00x7.00 1. The parameter is measured with 30pF test load. 2. Typical values are measured at VCC=1.8V, TA=25C and not 100% tested. PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. A LB OE A0 A1 A2 DNU Vcc Vss B I/O9 UB A3 A4 CS I/O1 Row Addresses C I/O10 I/O11 A5 A6 I/O2 I/O3 Row select Memory Cell Array D Vss I/O12 DNU A7 I/O4 Vcc E Vcc I/O13 DNU A16 I/O5 Vss I/O1~I/O8 Data cont Data cont Data cont I/O Circuit Column select F I/O15 I/O14 A14 A15 I/O6 I/O7 I/O9~I/O16 G I/O16 DNU A12 A13 WE I/O8 Column Addresses H DNU A8 A9 A10 A11 DNU 48-FBGA: Top View (Ball Down) Name CS OE WE A0~A16 Function Chip Select Input Output Enable Input Write Enable Input Address Inputs Name Vcc Vss UB LB DNU Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8) Do Not Use CS OE WE UB LB Control Logic I/O1~I/O16 Data Inputs/Outputs SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. -3Revision 0.0 April 2005 Preliminary K6F2016R4G Family PRODUCT LIST Industrial Temperature Products(-40~85C) Part Name K6F2016R4G-FF70 K6F2016R4G-XF70 K6F2016R4G-FF85 K6F2016R4G-XF85 1. LF : Lead Free Product CMOS SRAM Function 48-FBGA, 70ns, 1.8V 48-FBGA, 70ns, 1.8V, LF1) 48-FBGA, 85ns, 1.8V 48-FBGA, 85ns, 1.8V, LF1) FUNCTIONAL DESCRIPTION CS H X1) L L L L L L L L OE X 1) WE X 1) LB X 1) UB X 1) I/O1~8 High-Z High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din I/O9~16 High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din Mode Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write Power Standby Standby Active Active Active Active Active Active Active Active X1) H H L L L X 1) X1) H H H H H L L L H L X1) L H L L H L H X1) L H L L H L L X1) X 1) 1. X means dont care. (Must be low or high state) ABSOLUTE MAXIMUM RATINGS1) Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT VCC PD TSTG TA Ratings -0.2 to VCC+0.3V(Max. 2.6V) -0.2 to 2.6 1.0 -65 to 150 -40 to 85 Unit V V W C C 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. -4- Revision 0.0 April 2005 Preliminary K6F2016R4G Family RECOMMENDED DC OPERATING CONDITIONS1) Item Supply voltage Ground Input high voltage Input low voltage Note: 1. Industrial Product: TA=-40 to 85C, otherwise specified. 2. Overshoot: Vcc+1.0V in case of pulse width 20ns. 3. Undershoot: -1.0V in case of pulse width 20ns. 4. Overshoot and undershoot are sampled, not 100% tested. CMOS SRAM Symbol Vcc Vss VIH VIL Min 1.65 0 1.4 -0.2 3) Typ 1.8 0 - Max 1.95 0 Vcc+0.22) 0.4 Unit V V V V CAPACITANCE1) (f=1MHz, TA=25C) Item Input capacitance Input/Output capacitance 1. Capacitance is sampled, not 100% tested Symbol CIN CIO Test Condition VIN=0V VIO=0V Min - Max 8 10 Unit pF pF DC AND OPERATING CHARACTERISTICS Item Input leakage current Output leakage current Symbol Test Conditions VIN=Vss to Vcc CS=VIH or OE=VIH or WE=VIL or LB=UB=VIH, VIO=Vss to Vcc Cycle time=1s, 100%duty, IIO=0mA, CS0.2V, LB0.2V or/and UB0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, LB=VIL or/and UB=VIL, VIN=VIL or VIH IOL = 0.1mA IOH = -0.1mA Other input =0~Vcc 1) CSVcc-0.2V(CS controlled) or 2) LB=UBVcc-0.2V, CS0.2V(LB/UB controlled) 85ns 70ns Min -1 -1 1.4 - Typ1) 0.5 Max 1 1 2 12 15 0.2 8 Unit A A mA mA V V A ILI ILO ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current (CMOS) VOL VOH ISB1 1. Typical value are measured at VCC=1.8V, TA=25C and not 100% tested. -5- Revision 0.0 April 2005 Preliminary K6F2016R4G Family AC OPERATING CONDITIONS TEST CONDITIONS(Test Load and Test Input/Output Reference) Input pulse level: 0.2 to VCC-0.2V Input rising and falling time: 5ns Input and output reference voltage:0.9V Output load (See right): CL= 30pF+1TTL CMOS SRAM VTM3) R12) CL1) R22) 1. Including scope and jig capacitance 2. R1=3070, R2=3150 3. VTM =1.8V AC CHARACTERISTICS ( TA=-40 to 85C, Vcc=1.65~1.95V ) Speed Bins Parameter List Symbol Min Read cycle time Address access time Chip select to output Output enable to valid output UB, LB Access Time Read Chip select to low-Z output UB, LB enable to low-Z output Output enable to low-Z output Chip disable to high-Z output UB, LB disable to high-Z output Output disable to high-Z output Output hold from address change Write cycle time Chip select to end of write Address set-up time Address valid to end of write UB, LB Valid to End of Write Write Write pulse width Write recovery time Write to output high-Z Data to write time overlap Data hold from write time End write to output low-Z tRC tAA tCO tOE tBA tLZ tBLZ tOLZ tHZ tBHZ tOHZ tOH tWC tCW tAS tAW tBW tWP tWR tWHZ tDW tDH tOW 70 10 10 5 0 0 0 10 70 60 0 60 60 50 0 0 30 0 5 70ns Max 70 70 35 70 25 25 25 20 Min 85 10 10 5 0 0 0 10 85 70 0 70 70 60 0 0 35 0 5 85ns Max 85 85 40 85 25 25 25 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units DATA RETENTION CHARACTERISTICS Item Vcc for data retention Data retention current Data retention set-up time Recovery time Symbol VDR IDR tSDR tRDR Test Condition CSVcc-0.2V , VIN0V Vcc=1.2V, CSVcc-0.2V , VIN0V See data retention waveform 1) 1) Min 1.0 0 tRC Typ 0.5 2) Max 1.95 3 - Unit V A ns 1. 1) CSVcc-0.2V(CS controlled) or 2) LB=UBVcc-0.2V, CS0.2V(LB/UB controlled) 2. Typical value are measured at TA=25C and not 100% tested. -6- Revision 0.0 April 2005 Preliminary K6F2016R4G Family TIMING DIAGRAMS CMOS SRAM TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL) tRC Address tOH Data Out Previous Data Valid tAA Data Valid TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) tRC Address tAA tCO tOH CS tHZ UB, LB tBA tBHZ OE tOLZ tBLZ tLZ Data Valid tOE tOHZ Data out High-Z NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. -7- Revision 0.0 April 2005 Preliminary K6F2016R4G Family TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled) tWC Address tCW(2) CS tAW tBW tWP(1) WE tAS(3) tDW Data in High-Z tWHZ Data out Data Undefined Data Valid tOW tDH tWR(4) CMOS SRAM UB, LB High-Z TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled) tWC Address tAS(3) CS tAW tBW UB, LB tWP(1) WE tDW Data in Data Valid tDH tCW(2) tWR(4) Data out High-Z High-Z -8- Revision 0.0 April 2005 Preliminary K6F2016R4G Family TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled) tWC Address tCW(2) CS tAW tBW tAS(3) tWP(1) WE tDW Data in Data Valid tDH tWR(4) CMOS SRAM UB, LB Data out NOTES (WRITE CYCLE) High-Z High-Z 1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the CS going low to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. DATA RETENTION WAVE FORM CS or LB/UB controlled VCC 1.65V tSDR Data Retention Mode tRDR 1.4V VDR CSVCC-0.2V or LB=UBVcc-0.2V CS or LB/UB GND -9- Revision 0.0 April 2005 Preliminary K6F2016R4G Family PACKAGE DIMENSION 48 TAPE BALL GRID ARRAY(0.75mm ball pitch) Top View Bottom View B B 6 A #A1 B C D 5 4 B1 CMOS SRAM Unit: millimeters 3 2 1 C1 E C1/2 F G H B/2 Detail A A 0.32/Typ. Y 0.58/Typ. Notes. 1. Bump counts: 48(8 row x 6 column) 2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.) 3. All tolerence are +/-0.050 unless otherwise specified. 4. Typ: Typical 5. Y is coplanarity: 0.10(Max) - 10 - Side View D C Min A B B1 C C1 D E E1 Y 5.90 6.90 0.40 0.25 - Typ 0.75 6.00 3.75 7.00 5.25 0.45 Max 6.10 7.10 0.50 1.00 - 0.10 C Revision 0.0 April 2005 C E1 E |
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